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Journal Articles

Consumption kinetics of Si atoms during growth and decomposition of very thin oxide on Si(001) surfaces

Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

Thin Solid Films, 508(1-2), p.169 - 174, 2006/06

https://doi.org/10.1016/j.tsf.2005.07.321

Times Cited Count：13 Percentile：52.05(Materials Science, Multidisciplinary)

The surface morphological change during growth and subsequent decomposition of very thin oxide on Si(001) surface was observed in real time by RHEED combined with AES and macroscopically by STM. The RHEED intensity ratio between half-order spots revealed that etching of the surface took place in a manner of nucleation and lateral growth of dimer vacancy on the terrace during two-dimensional (2D) oxide island growth at 690 $^{circ}$ C, whereas the resultant oxide layer was decomposed at 709 $^{circ}$ C with consumption of Si atom in a step flow mode. STM observation of the partially oxide decomposed surface, however, showed that a number of Si islands with 10-20 angstrom in diameter remained randomly over the rather atomically flat terraces within voids in spite of the step-flow etching. These results are considered in terms of the phase separation of Si-rich oxide grown by 2D oxide island growth mode between Si clusters and a stoichiometric SiO $_{2}$ matrix and subsequent precipitation of Si islands on the terrace during decomposition.

Journal Articles

Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES

Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Yamauchi, Yasuhiro*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*

Applied Surface Science, 216(1-4), p.395 - 401, 2003/06

https://doi.org/10.1016/S0169-4332(03)00453-7

Times Cited Count：19 Percentile：64.2(Chemistry, Physical)

Real-time in-situ observation using photoelectron spectroscopy for elementary processes of Ti(0001) oxidation by O $_{2}$ molecules has been performed at the surface reaction analysis apparatus installed at the BL23SU in the SPring-8. And the real-time observation has been also performed by RHEED-AES methods at Tohoku University. The partial pressure region of oxygen was from 2x10 $^{-7}$ Torr to 8x10 $^{-8}$ Torr. The surface temperature was 473 K and 673 K. The variation from clean Ti surface toward TiO $_{2}$ was comfirmed by observation of Ti-2p and O-1s photoelectron spectra. Reflected electron intensity and O-KLL Auger electron intensity oscillated in the RHEED-AES measurements. These facts revealed that the surface morphological change of the oxidized Ti(0001) surface was associated not only with a disappearance of the surface metallic layer but also with a change of the oxidation state.

Journal Articles

Time-resolved X-ray diffraction study on surface structure and morphology during molecular beam epitaxy growth

Takahashi, Masamitsu; Yoneda, Yasuhiro; Inoue, Hirotane*; Yamamoto, Naomasa*; Mizuki, Junichiro

Journal of Crystal Growth, 251(1-4), p.51 - 55, 2003/04

https://doi.org/10.1016/S0022-0248(02)02375-8

Times Cited Count：3 Percentile：22.02(Crystallography)

The reflection high energy electron diffraction (RHEED) oscillation has been widely adopted for studies on growth kinetics and dynamics in molecular beam epitaxy (MBE). Recent development in brilliant X-ray source has enabled similar experiments with X-rays, which has great advantage in a straightforward interpretation of results and in a high angular resolution. In general, the diffracted intensity from surface is proportional to the surface structure factor associated with the surface reconstruction, F, multiplied by a damping factor associated with the surface roughness, m. We show that the two factors, F and m, can be obtained separately by measuring diffuse scattering around the two-dimensional Bragg peak during growth.

Journal Articles

RHEED observation of BaTiO thin films grown by MBE

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Surface Science, 529(3), p.283 - 287, 2003/04

https://doi.org/10.1016/S0039-6028(03)00361-3

Times Cited Count：8 Percentile：42.93(Chemistry, Physical)

Ferroelectric BaTiO thin filmwith a thickness of 10ML were epitaxally grown on SrTiO (001) substrate by very slow deposition using MBE. The investigation were carried out by two growth methods: (i) codeposition and (ii) alternate deposition. In-situ observation of RHEED confirmed that an epitaxial cube-on-cube structure was prepared. After the deposition, X-ray diffraction measurements were carried out. The 10-ML-thick BaTiO films were highly -axis oriented single crystals with good film quality.